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We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage. 

Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic dynamics have utilized large, millimeter-scale bulk crystals. In this work, we demonstrate direct electrical detection of antiferromagnetic resonance in structures on the few-micrometer scale using spin-filter tunneling in platinum ditelluride (PtTe₂)/bilayer chromium sulfide bromide (CrSBr)/graphite junctions in which the tunnel barrier is the van der Waals antiferromagnet CrSBr. This sample geometry allows not only efficient detection but also electrical control of the antiferromagnetic resonance through spin-orbit torque from the PtTe₂electrode. The ability to efficiently detect and control antiferromagnetic resonance enables detailed studies of the physics governing these high-frequency dynamics. 

Abstract Unconventional spin‐orbit torques arising from electric‐field‐generated spin currents in anisotropic materials have promising potential for spintronic applications, including for perpendicular magnetic switching in high‐density memory applications. Here, all the independent elements of the spin torque conductivity tensor allowed by bulk crystal symmetries for the tetragonal conductor IrO₂are determined via measurements of conventional (in‐plane) anti‐damping torques for IrO₂thin films in the high‐symmetry (001) and (100) orientations. It is then tested whether rotational transformations of this same tensor can predict both the conventional and unconventional anti‐damping torques for IrO₂thin films in the lower‐symmetry (101), (110), and (111) orientations, finding good agreement. The results confirm that spin‐orbit torques from all these orientations are consistent with the bulk symmetries of IrO₂, and show how simple measurements of conventional torques from high‐symmetry orientations of anisotropic thin films can provide an accurate prediction of the unconventional torques from lower‐symmetry orientations. 

Abstract Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic Fe x Tb 1- x layers decrease and vanish upon approaching the magnetic compensation point because the rate of spin transfer to the magnetization becomes much slower than the rate of spin relaxation into the crystal lattice due to spin-orbit scattering. These results indicate that the relative rates of competing spin relaxation processes within magnetic layers play a critical role in determining the strength of SOTs, which provides a unified understanding for the diverse and even seemingly puzzling SOT phenomena in ferromagnetic and compensated systems. Our work indicates that spin-orbit scattering within the magnet should be minimized for efficient SOT devices. We also find that the interfacial spin-mixing conductance of interfaces of ferrimagnetic alloys (such as Fe x Tb 1- x ) is as large as that of 3 d ferromagnets and insensitive to the degree of magnetic compensation. 

Sagnac interferometry can provide a substantial improvement in signal-to-noise ratio compared to conventional magnetic imaging based on the magneto-optical Kerr effect. We show that this improvement is sufficient to allow quantitative measurements of current-induced magnetic deflections due to spin-orbit torque even in thin-film magnetic samples with perpendicular magnetic anisotropy, for which the Kerr rotation is second order in the magnetic deflection. Sagnac interferometry can also be applied beneficially for samples with in-plane anisotropy, for which the Kerr rotation is first order in the deflection angle. Optical measurements based on Sagnac interferometry can therefore provide a cross-check on electrical techniques for measuring spin-orbit torque. Different electrical techniques commonly give quantitatively inconsistent results so that Sagnac interferometry can help to identify which techniques are affected by unidentified artifacts. 

We present measurements of thermally generated transverse spin currents in the topological insulator Bi₂Se₃, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi₂Se₃/CoFeB. We find that Bi₂Se₃does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is $\frac{J_s}{{\mathbf{\nabla }}_{\mathit{x}}\mathit{T}}$= (4.9 ± 0.9) × 10⁶ $\left(\frac{\hslash }{2e}\right)\frac{\mathbf{A}{\mathbf{m}}^{-2}}{\mathbf{K}\text{μ}{\mathbf{m}}^{-1}}$, and a lower bound for the magnitude of the spin Nernst ratio is −0.61 ± 0.11. The spin Nernst ratio for Bi₂Se₃is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi₂Se₃can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy. 

Abstract Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe₃GeTe₂(FGT) are reported. The orientation of the exchange bias is along the in‐plane easy axis of CrSBr, perpendicular to the out‐of‐plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in‐plane exchange bias provides sufficient symmetry breaking to allow deterministic spin–orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non‐zero exchange bias at 30 K. 

The wider application of spintronic devices requires the development of new material platforms that can efficiently manipulate spin. Bismuthate-based superconductors are centrosymmetric systems that are generally thought to offer weak spin–orbit coupling. Here, we report a large spin–orbit torque driven by spin polarization generated in heterostructures based on the bismuthate BaPb1-xBixO3 (which is in a non-superconducting state). Using spin-torque ferromagnetic resonance and d.c. non-linear Hall measurements, we measure a spin–orbit torque efficiency of around 2.7 and demonstrate current driven magnetization switching at current densities of 4×10^5 A〖cm〗^(-2). We suggest that the unexpectedly large current-induced torques could be the result of an orbital Rashba effect associated with local inversion symmetry breaking in BaPb1-xBixO3. 

Abstract We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl 0.5 Fe 1.5 O 4 (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180° domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion – nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180° domain wall. 

There is great interest in “end-to-end” analysis that captures how innovation at the materials, device, and/or archi-tectural levels will impact figures of merit at the application-level. However, there are numerous combinations of devices and architectures to study, and we must establish systematic ways to accurately explore and cull a vast design space. We aim to capture how innovations at the materials/device-level may ultimately impact figures of merit associated with both existing and emerging technologies that may be employed for either logic and/or memory. We will highlight how collaborations with researchers at these levels of the design hierarchy - as well as efforts to help construct well-calibrated device models - can in-turn support architectural design space explorations that will help to identify the most promising ways to use new technologies to support application-level workloads of interest. For given compute workloads, we can then quantitatively assess the potential benefits of technology-driven architectures to identify the most promising paths forward. Because of the large number of potentially interesting device-architecture combinations, it is of the utmost importance to develop well-calibrated analytical modeling tools to more rapidly assess the potential value of a given (likely heterogeneous) solution. We highlight recent efforts and needs in this space.